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| MITSUBISHI SEMICONDUCTOR TRIAC BCR12KM-14 MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE BCR12KM-14 OUTLINE DRAWING 10 0.3 6.5 0.3 3 0.3 Dimensions in mm 2.8 0.2 15 0.3 3.2 0.2 14 0.5 3.6 0.3 1.1 0.2 1.1 0.2 0.75 0.15 E 0.75 0.15 2.54 0.25 2.54 0.25 4.5 0.2 2.6 0.2 V Measurement point of case temperature ................................................................ 12A q VDRM ................................................................. 700V q IFGT !, IRGT ! , IRGT # .................................... 30mA q Viso .................................................................. 2000V q IT (RMS) T1 TERMINAL T2 TERMINAL GATE TERMINAL TO-220FN APPLICATION Switching mode power supply, light dimmer, electric flasher unit, hair driver, control of household equipment such as TV sets * stereo * refrigerator * washing machine * infrared kotatsu * carpet, solenoid drivers, small motor control, copying machine, electric tool MAXIMUM RATINGS Symbol VDRM VDSM Parameter Repetitive peak off-state voltageV1 Voltage class 14 700 840 Unit V V Non-repetitive peak off-state voltageV1 Symbol IT (RMS) ITSM I 2t PGM PG (AV) VGM IGM Tj Tstg -- Viso Parameter RMS on-state current Surge on-state current I 2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Isolation voltage Typical value Conditions Commercial frequency, sine full wave 360 conduction, Tc=81C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ratings 12 120 60 5 0.5 10 2 -40 ~ +125 -40 ~ +125 2.0 2000 Unit A A A2s W W V A C C g V Feb.1999 Ta=25C, AC 1 minute, T1 * T2 * G terminal to case V1. Gate open. MITSUBISHI SEMICONDUCTOR TRIAC BCR12KM-14 MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol IDRM VTM VFGT ! VRGT ! VRGT # IFGT ! IRGT ! IRGT # VGD Rth (j-c) (dv/dt)c Parameter Repetitive peak off-state current On-state voltage ! Test conditions Tj=125C, VDRM applied Tc=25C, ITM=20A, Instantaneous measurement @ # ! Limits Min. -- -- -- -- -- -- -- -- 0.2 -- V2 Typ. -- -- -- -- -- -- -- -- -- -- -- Max. 2.0 1.6 1.5 1.5 1.5 30 30 30 -- 3.0 -- Unit mA V V V V mA mA mA V C/ W V/s Gate trigger voltage Tj=25C, VD=6V, RL=6, RG=330 Gate trigger current Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltage @ # Tj=25C, VD=6V, RL=6, RG=330 Tj=125C, VD=1/2VDRM Junction to case V3 V2. The critical-rate of rise of the off-state commutating voltage is shown in the table below. V3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W. Voltage class VDRM (V) (dv/dt)c Symbol R Min. -- V/s L 10 Unit Test conditions 1. Junction temperature Tj=125C 2. Rate of decay of on-state commutating current (di/dt)c=-6.0A/ms 3. Peak off-state voltage VD=400V Commutating voltage and current waveforms (inductive load) SUPPLY VOLTAGE (di/dt)c TIME TIME VD TIME 14 700 MAIN CURRENT MAIN VOLTAGE (dv/dt)c PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS SURGE ON-STATE CURRENT (A) RATED SURGE ON-STATE CURRENT 200 180 160 140 120 100 80 60 40 20 0 100 2 3 4 5 7 101 2 3 4 5 7 102 ON-STATE CURRENT (A) 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 Tj = 125C Tj = 25C 10-1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 ON-STATE VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 |
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